| PART |
Description |
Maker |
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| CM1400DUC-24NF |
Mega Power Dual IGBTMOD 1400 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| LH-FSLH-S130C-0406A FSLH-S130C |
2012 Size 1200/1400 MHz Chip Multilayer Splitter/Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| 1214-800P |
800 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| HMC936LP6E |
1200 MHz - 1400 MHz, 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR 6 X 6 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 28 PIN
|
Hittite Microwave, Corp.
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| CGHV14500 CGHV14500F CGHV14500F-AMP CGHV14500F-TB |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| IRKCL240-12S20 IRKCL240-12S10 IRKCL240-14S30 |
250 A, 1200 V, SILICON, RECTIFIER DIODE
240 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY INTERTECHNOLOGY INC
|
